Renesas introduces second-generation gate driver integrated circuit for EV inverters
Semiconductor supplier Renesas Electronics has announced a new gate driver integrated circuit (IC) designed to drive high-voltage power devices, such as insulated gate bipolar transistors (IGBTs) and silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) for EV inverters.
Gate driver ICs are designed to provide an interface between the inverter control microcontroller unit (MCU) and the IGBTs and SiC MOSFETs that deliver power to the inverter.
Renesas says that to accommodate the higher voltages of EV batteries, its new RAJ2930004AGM IC has “a built-in 3.75 kV rms isolator, which is higher than the 2.5 kV rms isolator in the previous generation product, and can support power devices with a withstand voltage of up to 1,200 V.”
The company further says that the new IC facilitates more cost-effective inverter systems with improved common-mode transient immunity performance at 150 V/ns or higher, providing more reliable communication and increased noise immunity.